fcx605 issue 2 - september 2005 120v npn silicon high voltage darlington transistor summary description this new npn darlington transistor pr ovides users with very efficeint performance combining low v ce (sat) and very high hfe to give extremely low on state losses at 120v operation. this makes it deal for use in a variety of efficient driving functions including motors, lamps relays and solenoids and will also benefit circuits requiring high output current switching. features ? low saturation voltage ? hfe min 2k @ 1a ? i c = 1a continuous ? sot89 package with plot 1w ? specification is also available in eline and sot223 package outlines applications ? various driving functions - lamps - motors - relays and solenoids ? high output current switches ordering information device reel size (inches) tape width (mm) quantity per reel FCX605TA 7 12mm embossed 1000 units device marking 605 top view 1 sot 89 b c e v ceo =120v; v ce(sat) = 1v; i c = 1a c b c e
issue 2 - september 2005 fcx605 thermal resistance parameter symbol value unit junction to ambient (a) r ja 125 c/w junction to ambient (b) r ja 45 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. 2 absolute maximum ratings. parameter symbol limit npn unit collector-base voltage v cbo 140 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1a power dissipation at ta=25c (a) linear derating factor p d 1 8 w mw/c power dissipation at ta=25c (b) linear derating factor p d 2.8 22 w mw/c operating and storage temperature range t j :t stg -55 to +150 c
issue 2 - september 2005 fcx605 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 140 v i c =100 a collector-emitter breakdown voltage v (br)ceo 120 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 v i e =100 a collector cut-off current i cbo 100 10 na a v cb =10v v cb = 120v tamb = 100c emitter cut-off current i ebo 0.1 a v eb =8v collector emitter cut-off current i ces 10 a v ces =120v collector-emitter saturation voltage v ce(sat) 1 1.5 v v i c =250ma, i b =0.25ma* i c =1a, i b =1ma* base-emitter saturation voltage v be(sat) 1.8 v i c =1a, i b =1ma* base-emitter turn-on voltage v be(on) 1.7 v i c =1a,v ce =5v* static forward current transfer ratio h fe 2k 5k 2k 0.5 100k i c =50ma,v ce =5v* i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 mhz i c =100ma, v ce =10v f=20mhz input capacitance c ibo 90 pf v cb =500mv, f=1mhz output capacitance c obo 15 pf v cb =10v, f=1mhz turn-on time t (on) 0.5 s i c =500ma, v ce =10v i b1 =i b2 =0.5ma turn-off time t (off) 1.6 s i c =500ma, v ce =10v i b1 =i b2 =0.5ma *measured under pulsed conditions. pulse width=300 s. duty cycle 2% 3 nb. spice parameter data is available upon request for this device.
issue 2 - september 2005 fcx605 npn typical characteristics 4 v ce(sat) v i c i c - collector current (amps) v ce ( s at ) - (v olts) i c - collector current (amps) v ce - collector voltage (volts) safe operating area 11 0 0 0 10 100 0.01 0.1 1.0 10 single pulse test at t amb =25 c d.c. 1s 100ms 10ms 1.0ms 100s 0 0.4 0.01 0.1 10 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i c - collector current (amps) v be(sat) v i c v be ( s at ) - (v olts) 0.6 0.01 10 0.1 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c /i b =100 i c /i b =100 i c - collector current (amps) h fe v i c h f e - gain n o rm a l i sed to 1 amp 0.001 0.01 10 0.1 1 0.5 1.0 1.5 2.0 2.5 v ce =5v i c - collector current (amps) v be(on) v i c v b e - ( v olts) 0.6 1.0 1.4 1.8 0.01 0.1 110 v ce =5v -55 c +25 c +100 c 0.4 0.8 1.2 1.6 2.2 0.2 -55 c +25 c +100 c +175 c -55 c +25 c +100 c +175 c 0.4 -55 c +25 c +100 c zt x 60 4 ztx605 2.2 2.0
issue 2 - september 2005 fcx605 package dimensions pad layout details 5 1.2 1.0 1.2 3.2 1.5 4.0 2.4 sot89 pattern. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 dim millimeters inches dim millimeters inches min max min max min max min max a 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 e 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 e1 - 2.60 - 0.102 b2 1.50 1.80 0.060 0.071 g 2.90 3.00 0.114 0.118 c 0.28 0.44 0.011 0.017 h 2.60 2.85 0.102 0.112 package dimensions
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